As the demand for higher efficiency power electronics grows, more designers are turning to HEMT devices such as GaN and SiC power transistors. These advanced components switch at rates of several kilovolts per microsecond, which can lead to unwanted Miller induced turn-on events if not properly managed. Traditional voltage mode gate drivers typically rely on standard sourcing and sinking paths and require either additional pins or external circuitry to implement a Miller clamp. Current mode gate drivers (CMGD) overcome these limitations by enabling Miller clamping without the need for external components or gate drivers with a high pin count. This solution conserves valuable board space and in some cases eliminates the need for a negative gate drive bias, ultimately enabling more compact and cost-effective power electronic designs.
