Single Stage Microinverter using GaN Bi-directional switches (BDS) is explored in this work. The cycloconverter network formed by GaN BDS ensures high frequency operation, reduced footprint, minimum parasitic, low on state resistances and switch capacitances in comparison with Si or SiC based anti-series connected unidirectional switches. The use of GaN BDS ensures minimum conduction and switching losses facilitating high power density and high efficiency operation. The converter operation is verified in simulation and currently laboratory evaluation in progress for the power level upto 500 W. It is observed that converter is capable of operating with peak efficiency of 97.1% at 300 W of load power.
