This paper presents an experimental comparative study of loss characteristics in half-bridge and H-bridge power converters using Si IGBTs and SiC MOSFETs. Instead of relying on detailed loss models or additional circuitry, switching and conduction losses are experimentally distinguished, enabling practical optimization of switching frequency under different load conditions. All-IGBT and all-SiC half-bridge configurations are first evaluated to quantify their loss behavior. The results show that SiC devices provide superior efficiency at high voltage and high switching frequency, while Si IGBTs exhibit strong frequency sensitivity with rapidly increasing losses. Based on these findings, an 800 W single-phase hybrid H-bridge inverter is implemented, where SiC MOSFETs and Si IGBTs are allocated to different bridge arms. Experimental results demonstrate that the hybrid configuration extends the optimal switching-frequency range and improves the overall efficiency trade-off.
