This paper conducts a comprehensive analysis, supported by SPICE simulations, to evaluate the impact of various parameters on the parallelization of MOSFETs. To provide a broader understanding, the study investigates their behavior across different application scenarios, including motor drives, battery management systems (BMS), and hot-swap circuits. The primary focus is on key parameters such as the MOSFET threshold voltage (Vgsth), transconductance (gfs), gate-to-source capacitance (Cgs), and gate-to-drain capacitance (Cgd). These parameters are analyzed to highlight their influence on the current sharing of parallelized MOSFET configurations. By exploring diverse use cases and conditions, this research offers a practical perspective on the trade-offs and challenges encountered during parallelization design. Ultimately, the insights provided aim to guide readers in identifying the critical parameters that should be prioritized for evaluation in specific applications, enabling more informed and optimized decisions in MOSFET parallelization strategies
