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Power Modules / High Density Design

T37.5 - Design of a 6.5 kV SiC MOSFET Full-Bridge Module

Thursday, March 26, 2026
11:40 AM - 12:00 PM CT
Location: 217A
This article details the design of a 6.5 kV Silicon Carbide (SiC) MOSFET module in the full-bridge topology. The increased industrial use of SiC modules in industrial and transportation applications is driving intensified interest in module topologies beyond the half-bridge. Advanced module topologies unlock greater levels of physical integration and power density for power electronic systems such as DC-to-DC converters and electric motor drives. The prototype module in this article follows an industry-standard footprint created by Infineon (XHP3). The module design is outlined in this article, along with preliminary fabrication details and simulation results, which validate the proposed concept.