This paper presents an advanced double-pulse test (DPT) methodology for accurate dynamic characterization of 900V SiC MOSFETs operating at 1MHz. While operating in the MHz range enables higher power density, parasitic inductances and resistances introduce severe ringing that distorts waveforms and degrades measurement accuracy, which necessitates MHz-range characterization of SiC MOSFETs using DPT. To overcome these issues, we design the DPT platform for a 900V SiC MOSFET, including passive components selected based on device ratings and operating conditions, and extract parasitic values using a vector network analyzer to improve LTspice modeling accuracy. A time-domain mathematical analysis of the ohmic-region model is then developed to guide damping resistor design for oscillation suppression. Simulation and experimental validation of the design's practicality and effectiveness, reducing ringing peak magnitude by over 60% and shortening oscillation cycles to one-third.
