T28.3 - Performance Evaluation for a Novel β-Ga2O3 Schottky Barrier Diode Designed for High-Voltage MHz-Frequency Operation

Thursday, March 26, 2026

9:00 AM - 9:20 AM CT

Location: 214D

Technical Lecture Presenter(s)

AS

Abdullah Saboor

Cornell University

Co-Author(s)

KN

Kazuki Nomoto

Gallox Semiconductors
JM

Jonathan McCandless

Gallox Semiconductors
KA

Khurram Afridi, PhD

Cornell University

This paper presents a novel β-Ga2O3 vertical trench schottky barrier diode for high-voltage high-frequency power conversion and a new testing framework for performance evaluation of the diode. The β-Ga2O3 is used as a free-wheeling diode in a 400V converter to demonstrate MHz operation.