Skip to main content
APEC 2026 Main banner

Power Silicon MOSFETs, BJTs, IGBTs, etc.

T28.1 - Optimizing Gate Resistance in RC-IGBTs Through Analysis of Dynamic Switching Characteristics

Thursday, March 26, 2026
8:20 AM - 8:40 AM CT
Location: 214D
In response to the increasing demand for higher efficiency in vehicle electrification, silicon (Si) Reverse-Conducting Insulated Gate Bipolar Transistor (RC-IGBT) technology offers an effective solution. By integrating the freewheeling diode within the IGBT structure, RC-IGBTs significantly reduce chip area and simplify module architecture, thereby contributing to overall system miniaturization. This paper presents a quantitative evaluation comparing the performance of an RC-IGBT-based module with conventional bare-die configurations, focusing on thermal resistance, reverse recovery behavior, and switching losses. Additionally, the required total chip area under identical operating condition is compared between separate IGBT and diode chipsets and RC-IGBTs. The results demonstrate that RC-IGBT technology provides a promising pathway toward more compact and efficient automotive power modules.