T22.4 - Method for Determining Switching Timing of Gate Drive Current of Active Gate Driver to Maximize Turn-Off Loss Reduction Under Fixed Vds Overshoot Condition in SiC MOSFETs

Wednesday, March 25, 2026

2:30 PM - 2:50 PM CT

Location: 217B

Technical Lecture Presenter(s)

Yohei Sukita (he/him/his)

The University of Tokyo

Presentation

Co-Author(s)

TI

Toshiaki Inuma

The University of Tokyo
MI

Michihiro Ide

The University of Tokyo
KM

Kenichi Morokuma

Mitsubishi Electric Corporation
YW

Yukihiko Wada

Mitsubishi Electric Corporation
YY

Yuta Yamaoka

Mitsubishi Electric Corporation
YM

Yasushige Mukunoki

Mitsubishi Electric Corporation
MT

Makoto Takamiya

The University of Tokyo

A method for determining the optimum time in time-domain stop-and-go active gate driving (TD AGD) at turn-off is proposed. In the double pulse tests of SiC MOSFETs at 600 V, compared with the conventional gate driving, the proposed TD AGD reduces the switching loss by 49% and 38% at junction temperature of 25 ℃ and 125 ℃, respectively, underdrain-to-source voltage overshoot aligned conditions.