Regulation of electron beam current in a DC Electron Gun system is mostly carried out by focusing and control electrode. Bias voltage of this electrode with respect to accelerating high-voltage reference determines the magnitude of beam current and bias voltage can be used to switch the electron beam current ON and OFF. In the vast majority of electron gun systems, the switching transition of the beam current is required to be as fast as possible. In this paper, a novel high-speed SiC MOSFET based switch circuit that allows fast transition in bias voltage of an electron gun system is proposed. The proposed circuit is verified through experiments on an equivalent model of a real 90 kV 120 mA DC electron gun system.
