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    GaN and SiC Devices and Modules

    T12.5 - A Simplified and Low-Cost Voltage Balancing Control Method for Series-Connected SiC MOSFETs

    Wednesday, March 25, 2026
    9:50 AM - 10:10 AM CT
    Location: 214D
    This paper proposes a simplified active voltage balancing method using a low-voltage bipolar junction transistor (BJT) integrated into the Kelvin source path of each SiC MOSFET. This enables accurate voltage sharing during switching transients without sacrificing high-speed operation. A major advantage of the proposed approach is simplified circuit realization by eliminating the need for additional isolation power supplies for the BJT control circuits, thereby reducing cost and design complexity. The method is scalable and validated through both simulation and experiment. Simulations with four devices under a 3.6-kV bus confirm balanced voltage sharing, and experimental tests with three 1.2-kV devices at 1.2-kV and 1.8-kV DC buses show the imbalance was reduced to below 5%. These results highlight the effectiveness of the proposed control scheme and its potential for high-voltage SiC converter applications. Future work will extend the validation to more devices and explore operation at higher voltage and current levels to further demonstrate scalability.