T12.1 - Enhancement of Thermal Reliability for SiC MOSFET Based on Active Gate Driver

Wednesday, March 25, 2026

8:30 AM - 8:50 AM CT

Location: 214D

Technical Lecture Presenter(s)

Zhiwei Yang

Hefei University of Technology

Presentation

Co-Author(s)

SZ

Shuang Zhao

Hefei University of Technology
RS

Ruya Song

Hefei University of Technology
HL

Helong Li

Hefei University of Technology
YW

Yipu Wang

Dalian University of Technology
YW

Yuhu Wu

Dalian University of Technology
LD

Lijian Ding

Hefei University of Technology

Junction temperature is a critical indicator that greatly impacts the reliability of power MOSFETs. Specifically, junction temperature fluctuation can lead to accumulated fatigue inside the packaging material and finally a catastrophic failure. To minimize the impact of the lifetime brought by the junction temperature, this paper introduces a closed-loop active gate driver to maximize the lifetime of SiC MOSFETs. Via changing the driving voltage, the power loss on the device can be manually adjusted. This paper also comprehensively studies the SiC MOSFET multi-physics performance model incorporating thermal network, switching trajectory and lifetime model. Due to the complexity of performance model, a machine learning algorithm is employed to seek the optimal on-line driving voltage for the MOSFETs. Both double pulse test results and continuous operating test results validate the functionality of the proposed solution.