This paper presents the characterization of a hybrid switch composed of 1200V/9.3mΩ Silicon Carbide Field Effect Transistor (SiC FET) and 1200V/160A Silicon Insulated Gate Bipolar Transistors (Si-IGBTs) in parallel, operating from an 800V bus for next-generation EV traction inverters. Building on previous 400V studies on an automated double pulse test platform, this work extends the analysis to higher voltage systems increasingly used for improved efficiency and power density. Using an improved automated Double Pulse Test Platform (DPTP) for ST-PAK devices, switching energies for the 1.2kV Hybrid Switch are measured and compared against a 1.2kV full SiC FET and 1.2kV full Si-IGBT configurations. The paper also evaluates switching behavior and design consideration trade-offs unique to hybrid switches at 800V. The experimental results demonstrate the benefits of using a 1.2kV hybrid switch in an 800V traction inverter system.
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