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WBG Integration and Reliability

T04.8 - Design, Performance, and Htol Evaluation of a Monolithic 100 V / 25 A GaN IC Module

Tuesday, March 24, 2026
11:20 AM - 11:40 AM CT
Location: 214D
In this work, a monolithic Gallium-Nitride (GaN) integrated circuit (IC) comprising a high-electron-mobility transistor (HEMT) with an integrated gate driver, a level shifter, and a bootstrapped floating supply is presented. The IC is fabricated by using 100 V GaN on Silicon-on-Insulator (GaN-on-SOI) technology. The 100V-rated power HEMT has an on-resistance of 5 mΩ, 25 A current capability. The GaN IC module is measured up to 225°C while switching. It is a good candidate for point-of-load converters in telecom or data centers, active rectifiers, and high-temperature DC-DC converters for aerospace and automotive. This work presents the GaN IC module design, its top-level simulations, and functionality measurements in an asynchronous buck converter configuration. In addition, high-temperature operating life (HTOL) measurements are done for flip-chip QFN-packaged 40 V-rated GaN power HEMTs, made in the same technology node.