This work investigates the reliability impact of switching frequency and load current on the lifetime of Schottky-type p-GaN gates in GaN high-electron-mobility-transistors (HEMTs). A slight positive dependence of gate lifetime on switching frequency was observed across 1 kHz, 10 kHz, and 100 kHz. Gate lifetime is slightly improved with load current compared to without, under 100 kHz switching conditions. Additionally, a quantitative approach is introduced to model the overall gate lifetime under dynamic switching conditions by using DC testing results. It is demonstrated that DC test results can accurately predict the effective gate lifetime measured under dynamic switching conditions.
