Gallium-Nitride (GaN) high electron mobility transistors (HEMTs) have revolutionized the field of power electronics with their benefits such as high switching frequencies, low losses, and compact size. However, dynamic ON-resistance of these devices can impact their performance. This study provides an evaluation of dynamic ON-resistance of high-voltage enhancement-mode (e-mode) and depletion-mode (d-mode) GaN HEMTs that are commercially available. For this purpose, GaN transistors are tested in continuous-run operation instead of conventional double-pulse or multi-pulse approaches. The study presents measurement results of e-mode injection-gate GaN HEMTs from two distinct ON-resistance classes in both hard-switching and soft-switching operations, as well as a comparison with e-mode Schottky-gate and d-mode GaN technologies.
