D04.3 - First Demonstration of Buck Converter Using Diamond Mosfet

Monday, March 23, 2026

12:00 PM - 1:30 PM CT

Location: Meeting Room Level, Park View Foyer

Technical Dialogue Presenter(s)

SK

Sora Kawai

Power Diamond Systems, Inc.

Presentation

Co-Author(s)

SS

Shunsuke Shoji

Power Diamond Systems, Inc.
NO

Nobutaka Oi

Power Diamond Systems, Inc.
RY

Ryo Yoshida

Power Diamond Systems, Inc.
KO

Kosuke Ota

Power Diamond Systems, Inc.
HU

Hiroyuki Uchida

Power Diamond Systems, Inc.
AW

Akihiko Watanabe

kyushu institute of technology
KU

Kenji Ueda

Waseda University
Takanori Isobe (he/him/his)

University of Tsukuba
HK

Hiroshi Kawarada

Power Diamond Systems, Inc.
IO

Ichiro Omura

kyushu institute of technology
TF

Tatsuya Fujishima

Power Diamond Systems, Inc.

Diamond is an ultra-wide bandgap material with outstanding properties such as high thermal conductivity and high breakdown electric field, making it a promising candidate for next-generation power devices. Diamond MOSFETs using two-dimensional hole gas (2DHG) with low on-resistance, high critical breakdown field and fast switching characteristics have been reported. However, despite these advances, the operation of power converters using diamond MOSFETs, which is essential for evaluating their practical potential in power electronics applications, has not yet been demonstrated. In this study, we demonstrate an operation of the first buck converter using a cascode diamond MOSFET. The converter successfully steps down the input voltage even at switching frequency of 400 kHz. These results indicate that diamond MOSFETs have the potential to improve power density by enabling high-speed switching, which enables downsizing of passive components, and by high thermal conductivity, which enables downsizing of cooling systems.