Medium voltage Silicon Carbide (SiC) power devices with superior performance are gradually becoming a commercial reality, especially the 3.3 kV rated SiC power Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs). However, an important brake for the adoption of WBG semiconductors in high power applications is the availability of well-optimized power module packaging as well as the learning curve in reliably driving them. To address these challenges, this paper presents a 3.3 kV Intelligent Power Module (IPM) packaging architecture featuring a compact, highly integrated, plug-and-play design that accelerates time-to-market and reduces engineering overhead. The proposed module integrates multiple 3.3 kV SiC MOSFETs and gate drivers within a single intelligent package, enabling not only improved system efficiency but also advanced control capabilities.
