The performance of power devices, such as SiC MOSFETs, captured within PLECS models is strongly influenced by the behavior of the gate driver. Traditional simulation-based PLECS model generation typically relies on idealized gate drive pulses, which can introduce inaccuracies in the predicted switching performance. This session begins by comparing an ideal gate pulse to a real gate driver waveform, illustrating how key driver characteristics shape device switching behavior. The presentation then introduces the latest enhancement to onsemi’s Self Service PLECS Model Generator (SSPMG): the integration of onsemi gate drivers directly into the tool. Attendees will learn how to incorporate these drivers into their models to achieve more realistic and representative simulations. Ultimately, designers gain access to more accurate PLECS models that enable higher confidence, system level design.
