Our infrastructure comprises multiple ion implanters and advanced ion beam accelerators, delivering an exceptionally broad ion energy range of up to 20 MeV, access to a wide spectrum of ion species, and the flexibility to implement highly sophisticated, application-specific irradiation protocols. Complementing ion implantation, we provide precisely controlled electron irradiation for advanced defect engineering. This unique combination of capabilities positions us as a strategic partner for cutting-edge material modification and tailored lifetime engineering in power semiconductors, enabling measurable performance optimization at the device level.
We support both exploratory R&D-level process development and application-driven high-throughput solutions, ensuring a seamless transition from application-oriented studies to scalable implementation in industrial production environments.
