Illinois Institute of Technology
Anas Ghammaz is a power electronics engineer and graduate of Illinois Institute of Technology, where he specialized in advanced power conversion, device modeling, and energy system architectures. His work focuses on high-efficiency converter design, parasitic modeling, and high-performance GaN-based power systems.
At APEC 2026, he presents “Characterization Technique for Extracting Parasitic Inductances of a Bidirectional Single GaN Four Quadrant Switch with Ferrite Bead Gate Lead Using Two-Port S-Parameters Measurements” , which proposes a multi-configuration two-port characterization method for accurate extraction of parasitic elements in GaN FQS devices.
He is passionate about advancing high-frequency power electronics to enable more efficient, scalable, and reliable energy conversion systems.