Harbin Institute of Technology
Le Gao is a Ph.D. candidate and researcher at the Interdisciplinary Research Center of Integrated Circuits, School of Astronautics, Harbin Institute of Technology (HIT). His research focuses on reliability, health monitoring, and remaining useful life (RUL) prediction for power electronic devices, with an emphasis on SiC MOSFETs operating under multi-physics stresses (thermal, electrical, and radiation-related effects). He develops physics-informed machine learning methods to fuse device degradation mechanisms with data-driven models, aiming to improve early-fault diagnosis, uncertainty quantification, and online prognostics for safety-critical aerospace and power conversion applications. His work also involves building experimental testbeds and data pipelines for accelerated aging and degradation characterization, supporting model validation and deployment in practical power electronics systems.
Wednesday, March 25, 2026
11:40 AM - 12:00 PM CT