New bidirectional gallium nitride (GaN) high-electron-mobility transistor (HEMT) are enabling new topologies such as the single-stage matrix converter in hybrid electric vehicles (HEVs)/electric vehicles (EVs) on-board chargers (OBCs). These topologies will require new features to allow more effective driving of bidirectional switches in these new topologies. This presentation will cover some of these potential features a bidirectional gate driver will be able to leverage. For example, how a gate driver can implement overcurrent and under-voltage lockout (UVLO) protection in a way which responds quickly and intelligently responds to faults to avoid creating overvoltage across the bidirectional FETs.
