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GaN and SiC Devices and Modules

T04.9 - High-Frequency Characterization of Coss Loss and Dynamic Rdson in Gan

Tuesday, March 24, 2026
11:40 AM - 12:00 PM CT
Location: 214D
Gallium nitride (GaN) transistors are enabling higher power density in next-generation power electronics, but unmodeled loss mechanisms such as dynamic on-resistance (RdsON) and output capacitance (Coss) losses can limit their performance, especially at multi-megahertz frequencies. This work presents a comprehensive experimental characterization of RdsON and Coss losses for commercially available GaN devices under class-E type waveforms such as used in switched-mode RF power amplifiers and dc-dc converters. We measure device operation at duty cycles of 25% and 50%, switching frequencies up to 30 MHz, peak voltages from 200 V to 400 V, and case temperatures up to 80 ◦C. The resulting data and trends enable more accurate device modeling and selection, supporting optimized high-efficiency high-frequency converter designs.