GaN high-electron-mobility transistors (HEMTs) are widely used for high-efficiency, high-voltage power conversion, but device development often proceeds with limited access to foundry process data, unlike IC design with full process design kits (PDKs). As a result, foundry customers design their own devices, making it difficult to reliably link simulations to silicon behavior. In this work, we narrow this gap by calibrating TCAD to measured electrical characteristics of a reference p-GaN-gate HEMT and constructing an integrated design dataset from the calibrated simulations. By systematically sweeping key structural and material parameters—gate-to-drain length, AlGaN barrier and GaN channel thicknesses, aluminum mole fraction, and magnesium doping concentration—we quantify their impact on threshold voltage (Vth), on-resistance (Ron), and breakdown voltage (BV). The resulting dataset enables target-centered design and faster trade-off decisions, helping customers reduce prototype iterations and development time by approximately 40% while remaining consistent with realistic foundry process capabilities.
