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    GaN and SiC Devices and Modules

    D25.7 - Empirical Pre-Screen Method for Paralleling Operation of Medium-Voltage Silicon Carbide MOSFETs

    Thursday, March 26, 2026
    12:00 PM - 1:45 PM CT
    Location: Poster 3
    This paper proposes a screening method that ranks candidate device pairs using only switching features extracted from standard double-pulse tests (DPT). The features are standardized across the device set, and a straightforward comparison score developed from absolute standardized differences is used to rank pair compatibility. Acurrent sharing imbalance index (CSII), calculated from parallel paired device turn-on measurements, is presented to quantify current sharing performance. Initial results from a sample of 31 discrete SiC MOSFETs indicate a monotonic trend between the comparison score and CSII, with rise-time and di/dt mismatch as the strongest indicators. The proposed method uses only DPT waveforms and is intended as a practical pre-selection step for device pairing.