This seminar introduces OmniGaNTM, a new Gallium Nitride (GaN) device designed to enable next generation of compact and efficient power supply applications. OmniGaNTM integrates an internal driver, allowing direct interface with standard analog controllers, and features comprehensive protection functions, including overtemperature and desaturation protection. The reference design achieves >95% efficiency by utilizing GaN technology in both the power factor correction (PFC) and DC-DC sections. The PFC stage employs a single-boost continuous conduction mode (CCM) topology controlled by the L4985D, while the 2-Switch Flyback converter operates in quasi-resonant (QR) mode. This seminar will highlight the key features of OmniGaNTM and demonstrate its application in advanced LED driver designs with PFC and Flyback topologies.
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