This presentation discusses SiC MOSFET based half-bridge resonant inverter for next generation home appliance induction heating applications where higher efficiency and cost reduction are key value drivers. Side-by-side comparisons between traditional IGBT and SiC MOSFET are presented. SiC MOSFET solution delivers ultrahigh efficiency of 99.7% at 2kW, and it surpasses IGBT by 1.3%. The total loss savings enabled by SiC MOSFET results in fan-less operation of the inverter and significant reduction of auxiliary power supply demand, which altogether greatly enhances the system reliability and brings in noteworthy system cost savings.