D05.2 - A Current Source Gate Driver with Dual-Edge Adaptive Slew Rate for GaN Devices

Thursday, March 26, 2026

12:00 PM - 1:45 PM CT

Location: Hemisfair Ballroom

Technical Dialogue Presenter(s)

Giao Huu Thuc (he/him/his)

Department of Electrical Engineering, National Taiwan University/ Leadtrend Technology Corporation

Presentation

Co-Author(s)

MT

Meng-Jen Tsai

Design Department, Leadtrend Technology Corporation
CC

Ching Jan Chen

Department of Electrical Engineering, National Taiwan University
JF

Jyan-Kai Fu

Design Department, Leadtrend Technology Corporation
Wen Xin Wu, PhD (she/her/hers)

National Taiwan University
WL

Wei-Ru Lin

National Taiwan University

This paper introduces a current source gate driver with an adaptive slew rate capability to enhance the switching performance of discrete or co-packing GaN devices on a wide range of switching frequencies, 𝑓𝑠𝑤. The proposed driver IC implements sophisticated principles of frequency to current conversion, current amplification, and current-based reverse recovery slope to control the gate driving strength and slew rate (SR) fully on-chip without external gate resistors and programmable SR resistors. The switching loss, ringing, and overshoot issues on both edges of the GaN power switches are effectively improved. The IC prototype is designed by the TSMC 0.18 𝜇m HVG2 process supporting high-voltage Mosfets. According to the post-simulation at high 𝑓𝑠𝑤 of 2 MHz, 𝑑𝑉𝑑𝑠/𝑑𝑡 reach 47.8 V/ns and 48.5 V/ns on falling and rising edges of a discrete GaN switch, respectively, without ringing problems. Compared with a separated path voltage source gate driver, the switching loss can be reduced by 22 %.