D04.2 - A Fast On-State Voltage Measuring Circuit for GaN Power Devices

Thursday, March 26, 2026

12:00 PM - 1:45 PM CT

Location: Hemisfair Ballroom

Technical Dialogue Presenter(s)

Honglang Zhang (he/him/his)

University of Electronic Science and Technology of China

Presentation

Co-Author(s)

HL

Hui Li

University of Electronic Science and Technology of China
SY

Shan Yin

Huawei Technologies Company Ltd.
YW

Yingzhe Wu (he/him/his)

Shanghai Gatek Automotive Electronics Company Ltd.
Chen Song (he/him/his)

University of Electronic Science and Technology of China
Jinshu Lin

University of Electronic Science and Technology of China
XL

Xi Liu

School of Aeronautics and Astronautics, University of Electronic Science and Technology of China

In this work, a fast VDS,on measuring circuit of GaN power devices with an optimized diode-based clamping circuit is presented. The double pulse test results demonstrate that the proposed clamping circuit achieves more than a 20% reduction in dynamic response time compared to the conventional approach. Furthermore, the VDS,on measuring circuit is introduced and evaluated, and the experimental results indicate that the measured VDS,on maintains a relative error within 2%, while the dynamic response time remains below 70 ns.