Accurate junction temperature measurement of power semiconductors is essential for reliable thermal characterization, including both transient thermal impedance analysis and power cycling lifetime assessment. Currently, direct measurement of the die temperature within multi-chip power modules is burdensome for commercial products; therefore, a temperature-sensitive electrical parameter (TSEP) is commonly utilized to establish a correlation between the TSEP and the junction temperature within the device during thermal characterization. A common misconception in the industry is that the TSEP measurement yields the average temperature of paralleled die. However, as demonstrated in this manuscript, this statement is inaccurate. This manuscript demonstrates that the virtual junction temperature derived from the TSEP corresponds to the maximum die temperature within a Silicon Carbide (SiC) power module, rather than the average temperature.
