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GaN and SiC Devices and Modules

D25.6 - Analysis of Hard and Soft Switching Loss Imbalance Induced by Parameter Dispersion in Parallel Connected SiC MOSFETs

Thursday, March 26, 2026
12:00 PM - 1:45 PM CT
Location: Hemisfair Ballroom
Parallel operation of SiC MOSFETs is essential in high-current converters since individual switches are limited in current handling capabilities by maximum die size and packaging constraints. However, device-to-device parametric variations lead to unevenly distributed switching currents, thus resulting in unbalanced switching losses and additional thermal stress. This paper presents an experimental investigation of how variations in the intrinsic parameters of the devices can influence loss sharing during hard and soft switching. A population of device samples was tested at datasheet conditions, and switching loss imbalance was investigated on paralleled pairs. Results reveal that even modest parameter mismatch can lead to significant imbalance in both soft and hard-switching transitions. These findings highlight the importance of dispersion-aware design practices for reliable parallel operation in high-current converters.