T22.9 - Active Gate Driver with Controllable Drain-to-Gate Capacitive Coupling for Voltage Overshoot Reduction in SiC MOSFETs

The use of SiC MOSFETsenables faster switching transitions in comparison to conventional silicon devices. However, these benefits are accompanied by increased voltage overshoots, which might ask for more expensive semiconductors with higher breakdownvoltages. This work presents a straightforward and robust active gate driver based on adjustable capacitive coupling between drain and gate. As demonstrated by experimental validation, the proposed design reduces the undesired voltage overshoots during switching while still achieving low switching losses. This solution offers a cost-effective and conveniently integrable approach for power electronic applications.