Skip to main content
APEC 2026 Main banner

    Ultra-Wide Bandgap Devices

    T28.4 - Power-over-Fiber Gate Drive Design and Switching Behavior of a 1.9-kV β-Ga₂O₃ Vertical FinFET

    Thursday, March 26, 2026
    9:20 AM - 9:40 AM CT
    Location: 214D
    Abstract—This paper presents the design of a power-over-fiber (PoF) gate-drive system and the first experimental demonstration of the switching behavior of vertical β-Ga2O3 FinFETs. The long-term performance targets for these devices are 20 kV and 5 A, with predicted switching capabilities up to 500 kV/μs and 100 kA/μs. To support such high-voltage, high-speed operation, the PoF-based gate drive provides inherent galvanic isolation, strong common-mode transient immunity, and complete elimination of gate-drive crosstalk. The architecture of the PoF gatedrive system and the implementation of the double-pulse test (DPT) setup are presented in detail. The structural design of the vertical β-Ga2O3 FinFET and static characterization of the first-generation proof-of-concept device, demonstrating a breakdown voltage of 1.9 kV and a drain current of 100 mA, are also reported. Furthermore, this work presents, for the first time, the dynamic switching behavior of vertical β-Ga2O3 power transistors, measured at reduced test voltages as an initial step toward high-voltage switching evaluation.