This paper presents a new gate drive methodology for stacked GaNFETs in a radiation-tolerant, high-voltage bidirectional pulser. Conventional transformerless gate drive techniques, when applied to stacked GaNFETs, suffer from Miller-induced turn-on, unbalanced drain-source voltage, and gate ringing during high-speed transitions. The proposed method introduces novel Miller suppression circuitry, a capacitive voltage balancing network, and optimized ferrite bead selection to address these issues. Simulation and experimental results confirm reliable operation at high slew rates, improved voltage sharing across all devices, and elimination of Miller-induced turn-on. The approach is scalable and compatible with discrete, radiation-tolerant implementations, offering a practical solution for space pulsed power applications.
