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Gate Drive Circuits and Fault Protection

T22.7 - A Self-Regulating Gate Driver with Low-Voltage MOSFETs for Switching Overshoot Suppression of SiC MOSFET

Wednesday, March 25, 2026
4:00 PM - 4:20 PM CT
Location: 217B
The design of gate driver for SiC MOSFETs presents significant challenges due to severe oscillations, voltage overshoot, and Electromagnetic Interference (EMI) caused by parasitic parameters during high-speed switching, which limit device reliability and system performance. To address these issues, this work proposes a self-regulating gate driver utilizing low-voltage (LV) MOSFETs as dynamic impedance modulator to effectively suppress switching oscillations during different switching phases. This hardware-centric approach eliminates complex control algorithms and sensing circuits, simultaneously suppressing the turn-off voltage overshoot (from 180V to 56V), the turn-on current overshoot (from 22A to 12A) and reducing turn-off loss (up to 40.6%) compared with a conventional gate driver. The novel gate driver significantly suppresses the overshoot, and improves the trade‑off between switching loss and switching overshoot, while improving the switching trajectory of the device, which will enable full exploitation of SiC MOSFET's performance potential.