Monolithic bidirectional GaN switches (MBDSs) deliver true four-quadrant operation with low on-resistance and compact integration, suiting next-gen converters. Reliable deployment, however, requires accurate dynamic characterization to guide device selection, gate-driver design, and thermal management. Conventional double-pulse testers (DPTs) target unidirectional parts and cannot evaluate all MBDS quadrants. We present a four-quadrant DPT that decouples control of blocking-voltage polarity and conduction direction, enabling systematic study of dynamic RON under forward/reverse conduction after either polarity of stress. Simulations validate the approach, and a hardware prototype demonstrates how dynamic RON depends on blocking-stress conditions. The results provide a practical framework for MBDS characterization and support their use in high-performance power electronic systems.
