Tianjin Research institute of Electric Science Co.,Ltd.
It is common to parallel silicon-IGBT power modules for megawatt-level applications, but the direct paralleling of SiC power modules are rarely reported. This paper provides the design considerations on paralleling three 1700V/800A SiC modules using centralized gate drive terms of gate drives, miller clamping, short-circuit protection, as well as bus-bar designs. An enhanced-gate-driving scheme is developed to deliver a peak sink/source current of 50A with integrated Miller clamping and soft turn-off function at short-circuit protection. The paralleling scheme is validated through 1100V/1200A switching tests.
