TSEPs offer a fast and non-intrusive method for temperature monitoring, but their accuracy can degrade over time due to shifts in the electrothermal calibration curve caused by device aging. To address this limitation, this work begins with a comprehensive review of reported TSEPs to identify a degradation-free candidate suitable for long-term monitoring. Among the options, the body diode’s forward voltage at low current shows strong potential, as it is relatively insensitive to gate oxide and package degradation. However, the reliability of the SiC body diode itself remains a concern, particularly due to inconsistent findings in literature related to bipolar degradation mechanisms. To investigate these concerns, a dedicated test platform and structured workflow are developed to conduct accelerated stress testing and convert the results into equivalent lifetime metrics under realistic PWM converter operation. This methodology is demonstrated through a case study using Wolfspeed Gen 3 SiC MOSFETs, with experimental results providing insight into the body diode’s reliability under realistic converter conditions along with the qualification of identified degradation-free TSEP.
