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Power Electronics for Hybrid and Electric Vehicles

T08.4 - Current Ampacity Scaling of Automotive 750V Si/SiC Fusion Switch and Device Degradation Testing

Tuesday, March 24, 2026
9:30 AM - 9:50 AM CT
Location: 217D
This experimental study investigates the Si/SiC Fusion switch under various scaled SiC MOSFET die areas and thermal stacks to meet different current ampacity requirements, ranging from 300 to 700 Arms at 470 V power net architectures. The analysis is supplemented by thermal infrared camera (IR) measurements during inverter operation, which enable the derivation of the current ampacity at given maximum allowed junction temperatures. The die area scaling of the Si/SiC Fusion switch is compared to that of an IGBT/Diode inverter and a SiC MOSFET based inverter solution at different die areas. To address potential device degradation, the Si/SiC Fusion switch, with its shorted IGBT and MOSFET gate for simultaneous gate drive, is subjected to a long-term high current/voltage switching stress test. Additionally, repetitive short circuit (SC) testing is performed beyond standard automotive application conditions, including double pulse readout tests between the short circuit stress tests. No drift or degradation was observable after these excessive stress tests.