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GaN and SiC Devices and Modules

T04.2 - Dynamic Threshold Voltage of Low-Voltage Schottky-Type p-GaN Gate HEMT in Soft-Switching Operation

Tuesday, March 24, 2026
8:50 AM - 9:10 AM CT
Location: 214D
Schottky-type p-GaN gate HEMTs are promising for 48-V DCX converters, but their dynamic threshold voltage (VTH) behavior degrades on-state performance and system efficiency. While prior studies focus on individual stress conditions (e.g., drain or gate stress alone), real-world operation involves gate/drain mixed stress during continuous switching. This work proposes a novel measurement circuit enabling real-time VTH extraction under high-frequency, soft-switching, mixed-stress operation — the first application-oriented characterization. Using this circuit, we evaluate dynamic VTH in a commercial 100-V Schottky-type p-GaN gate HEMT, revealing a mixed-stress-induced VTH shift of ~0.5 V (50% of static value), showing greater impact than individual stresses. Besides, three distinct characteristics are observed: (1) weak frequency-dependence across 100 kHz – 1 MHz, (2) negative temperature-dependence from 25 to 100 ℃, and (3) nonmonotonic relation on gate driving voltage in the range of 4 V to 6 V.