Ji Shu, Dr. (he/him/his)

HKUST

Ji Shu received Ph.D. degree in electronic and computer engineering at The Hong Kong University of Science and Technology, Hong Kong, in 2025. He is currently a PostDoc at the same university. His research interests include AI data center power delivery, next-generation power conversion, and wide-bandgap power semiconductor devices, such as the GaN/SiC HyFET.

Presentation(s):

• T04.2 - Dynamic Threshold Voltage of Low-Voltage Schottky-Type p-GaN Gate HEMT in Soft-Switching Operation

  Tuesday, March 24, 2026
  8:50 AM - 9:10 AM CT

• D26.5 - Self-Adjusting LFER-Based Dynamic Gate Driving Technique for Fast-Switching GaN HEMTs in 48-V Applications

  Thursday, March 26, 2026
  12:00 PM - 1:45 PM CT