Skip to main content
APEC 2026 Main banner
Technical Dialogue
Dialogue

D25 - Devices 2: SiC

Thursday, March 26, 2026
12:00 PM - 1:45 PM CT
Location: Hemisfair Ballroom

Presentations:

  • 12:00 PM - 1:45 PM CT
    A Master-Slave Gate Driver Architecture for Paralleling of Medium-Voltage SiC MOSFET Power Module with Oscillation Feedback Path Blocking

    Technical Dialogue Presenter: Gao Liu – Aalborg University

    Co-Author: Zhixing Yan – Aalborg University

    Co-Author: Hongbo Zhao – AAU Energy

    Co-Author: Stig Munk-Nielsen – Aalborg University

  • 12:00 PM - 1:45 PM CT
    Robustness of SiC and GaN Diodes Under Extreme dv/dt Stress Up to 980 V/ns

    Technical Dialogue Presenter: Zineng Yang – The University of Hong Kong

    Co-Author: Hongchang Cui (he/him/his) – University of Hong Kong

    Co-Author: Xin Yang (he/him/his) – Department of Electrical and Electronic Engineering, The University of Hong Kong

    Co-Author: Hehe Gong – The University of Hong Kong

    Co-Author: Yuan Qin – Center for Power Electroncis Systems, Virginia Tech

    Co-Author: Yuhao Zhang – University of Hong Kong

  • 12:00 PM - 1:45 PM CT
    In-situ Characterization of Forward Stability in SiC and GaN Diodes Over Stress Times from 10⁻⁵ to 103³ S

    Technical Dialogue Presenter: Xin Yang (he/him/his) – Department of Electrical and Electronic Engineering, The University of Hong Kong

    Co-Author: Hehe Gong – The University of Hong Kong

    Co-Author: Zineng Yang – The University of Hong Kong

    Co-Author: Hongchang Cui (he/him/his) – University of Hong Kong

    Co-Author: Hengbo Zhang – Department of Electrical and Electronic Engineering, The University of Hong Kong

    Co-Author: Yifei Huang – Center for Advanced Semiconductors and Integrated Circuits (CASIC)

    Co-Author: Kuokchi Lei (he/him/his) – Department of Electronic Engineering, Tsinghua University

    Co-Author: Yuhao Zhang – University of Hong Kong

  • 12:00 PM - 1:45 PM CT
    Switching Loss Characterization with Uncertainty Quantification for 3.3 kV Monolithic Versus Discrete SiC Bidirectional FETs

    Technical Dialogue Presenter: Pengyu Fu, PhD – The Ohio State University

    Co-Author: Zhining Zhang – The Ohio State University

    Co-Author: Shuwei He – The Ohio State University

    Co-Author: Stephen Mancini – SUNY Polytechnic Institute

    Co-Author: Adam J. Morgan, PhD – NoMIS Power

    Co-Author: Woongje Sung – SUNY Polytechnic Institute

    Co-Author: Anant Agarwal – The Ohio State University

    Co-Author: Jin Wang, PhD – The Ohio State University

  • 12:00 PM - 1:45 PM CT
    Analysis of Hard and Soft Switching Loss Imbalance Induced by Parameter Dispersion in Parallel Connected SiC MOSFETs

    Technical Dialogue Presenter: Gianmario Pellegrino, Dr. – Politecnico di Torino

    Co-Author: Dimitrios Deldimos – Politecnico di Torino

    Co-Author: Fausto Stella, PhD – Politecnico di Torino

    Co-Author: Andrea Piccioni, MSc. (he/him/his) – Infineon Technologies Austria

  • 12:00 PM - 1:45 PM CT
    Empirical Pre-Screen Method for Paralleling Operation of Medium-Voltage Silicon Carbide MOSFETs

    Technical Dialogue Presenter: Eric M. Allee (he/him/his) – University of Arkansas

    Co-Author: Ahmed Ismail – University of Arkansas

    Co-Author: Baher Abu Sba (he/him/his) – University of Arkansas

    Co-Author: Yue Zhao – University of Arkansas

  • 12:00 PM - 1:45 PM CT
    Lifetime of Wolfspeed SiC Discrete MOSFETs Under Power Cycling Stress

    Technical Dialogue Presenter: Shilpi Mukherjee, PhD – Wolfspeed, Inc.

    Co-Author: Ayan Biswas, PhD – Wolfspeed, Inc.

    Co-Author: Edgar Ayerbe – Wolfspeed, Inc.

    Co-Author: Don Gajewski – Wolfspeed

  • 12:00 PM - 1:45 PM CT
    Design and Validation of a 1MHz Double-Pulse Test (DPT) Methodology for 900V SiC MOSFET

    Technical Dialogue Presenter: Jinyuan Hu (she/her/hers) – University of Washington

    Co-Author: Jungwon Choi (she/her/hers) – University of Washington

  • 12:00 PM - 1:45 PM CT
    Online Condition Monitoring of Bond Wire Lift-Off in SiC MOSFETs Using Discrete Transmission Line Response to Gate Resistor Voltage in SiC MOSFET

    Technical Dialogue Presenter: Keqi Song (he/him/his) – City University of Hong Kong

    Co-Author: Henry Shu-Hung Chung (he/him/his) – City University of Hong Kong