T04 - GaN Devices

Technical Lecture Session Chair(s)

• 

  Marie Lawson (she/her/hers)

  Huntington Ingalls Industries, Newport News Shipbuilding
• AK

  Alexander Kahnke, M.S. in EE

  Huntington-Ingalls Industries

Student Session Assistant(s)

• 

  Yuzhou Yao (he/him/his)

  The Ohio State University

Presentations:

• 8:30 AM - 8:50 AM CT

  Comparison of Dynamic ON-Resistance of E-Mode and D-Mode High-Voltage GaN HEMTs in Continuous-Run Operation
  

  Technical Lecture Presenter: Behzad Poorali Riabi, PhD (he/him/his) – Infineon Technologies

  Co-Author: Tiziano Pastore (he/him/his) – Infineon Technologies

  Co-Author: Zhemin Zhang – Infineon
• 8:50 AM - 9:10 AM CT

  Dynamic Threshold Voltage of Low-Voltage Schottky-Type p-GaN Gate HEMT in Soft-Switching Operation
  

  Technical Lecture Presenter: Yuwei Wu (she/her/hers) – The Hong Kong University of Science and Technology

  Co-Author: Longge Deng – The Hong Kong University of Science and Technology

  Co-Author: Junting Chen – The Hong Kong University of Science and Technology

  Co-Author: Zongjie Zhou (he/him/his) – The Hong Kong University of Science and Technology

  Co-Author: Ji Shu, Dr. (he/him/his) – HKUST

  Co-Author: Kevin Jing Chen – The Hong Kong University of Science and Technology
• 9:10 AM - 9:30 AM CT

  Dynamic On-Resistance and Dynamic Threshold Voltage of GaN-on-Si HEMTs with Varying Substrate Connections in Steady-State Hard Switching
  

  Technical Lecture Presenter: Hongchang Cui (he/him/his) – University of Hong Kong

  Co-Author: Xin Yang (he/him/his) – Department of Electrical and Electronic Engineering, The University of Hong Kong

  Co-Author: Zineng Yang – The University of Hong Kong

  Co-Author: Hengbo Zhang – Department of Electrical and Electronic Engineering, The University of Hong Kong

  Co-Author: Hehe Gong – The University of Hong Kong

  Co-Author: Yuhao Zhang – University of Hong Kong
• 9:30 AM - 9:50 AM CT

  Reliability Investigation of p-GaN Gates in GaN HEMTs Under Dynamic Switching Conditions
  

  Technical Lecture Presenter: Angel E. Espinoza – EPC Co.

  Co-Author: Ricardo Garcia (he/him/his) – EPC Co.

  Co-Author: Shengke Zhang – EPC Co.

  Co-Author: Siddhesh Gajare – EPC Co.

  Co-Author: Peter Tieu – EPC Co.
• 9:50 AM - 10:10 AM CT

  Novel Internal Gate-to-Gate Crosstalk Phenomenon in Monolithic Bidirectional GaN-on-Si HEMTs
  

  Technical Lecture Presenter: Hongchang Cui (he/him/his) – University of Hong Kong

  Co-Author: Haozhe Jin – University of Hong Kong

  Co-Author: Jian Guo – University of Hong Kong

  Co-Author: Yuhao Zhang – University of Hong Kong
• 10:40 AM - 11:00 AM CT

  Eliminating Asynchronous Switching in Parallel GaN HEMTs Through Delay Compensation for Equal Current Sharing
  

  Technical Lecture Presenter: Kaushik Basu – Indian Institute of Science (IISc) Bengaluru

  Co-Author: Harish S (he/him/his) – Indian Institute of Science, Bangalore

  Co-Author: Manish Mandal (he/him/his) – Indian Institute of Science Bangalore
• 11:00 AM - 11:20 AM CT

  Evaluation and Application of Kilovolt GaN-on-Sapphire Diode Ic
  

  Technical Lecture Presenter: Zineng Yang – The University of Hong Kong

  Co-Author: Xin Yang (he/him/his) – Department of Electrical and Electronic Engineering, The University of Hong Kong

  Co-Author: Hongchang Cui (he/him/his) – University of Hong Kong

  Co-Author: Hehe Gong – The University of Hong Kong

  Co-Author: Yuan Qin – The Virginia Polytechnic Institute and State University

  Co-Author: Hengbo Zhang – Department of Electrical and Electronic Engineering, The University of Hong Kong

  Co-Author: Yuhao Zhang – University of Hong Kong
• 11:20 AM - 11:40 AM CT

  Design, Performance, and Htol Evaluation of a Monolithic 100 V / 25 A GaN IC Module
  

  Technical Lecture Presenter: Öncü Benli Marin Palomo, MSc (she/her/hers) – MinDCet NV.

  Co-Author: Philippe Billet – MinDCet NV.

  Co-Author: Jef Thone – MinDCet NV

  Co-Author: Mert Önkol (he/him/his) – MinDCet NV.

  Co-Author: Olga Syshchyk – IMEC

  Co-Author: Ali Roshanghias – Silicon Austria Labs

  Co-Author: Kaneeze Noorul Ain – Silicon Austria Labs

  Co-Author: Mike Wens – MinDCet NV.
• 11:40 AM - 12:00 PM CT

  High-Frequency Characterization of Coss Loss and Dynamic Rdson in Gan
  

  Technical Lecture Presenter: Mansi Vipul Joisher (she/her/hers) – Massachusetts Institute of Technology

  Co-Author: Matthew De Jesus – Massachusetts Institute of Technology

  Co-Author: Carlos Sanchez – Massachusetts Institute of Technology

  Co-Author: David Perreault – Massachusetts Institute of Technology