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    Ultra-Wide Bandgap Devices

    T28.5 - DC Modeling of 8 kV Depletion Mode Gallium Oxide MOSFET

    Thursday, March 26, 2026
    9:40 AM - 10:00 AM CT
    Location: 214D
    Gallium oxide (Ga2O3) has recently gained significant attention for high-voltage power electronics owing to its ultra-wide bandgap, high critical electric field (~8 MV/cm), and the potential for cost-effective single-crystal wafer production. Among its polymorphs, β-Ga2O3 is the most stable and has enabled the demonstration of depletion-mode lateral MOSFETs with breakdown voltages up to 8 kV. Building on our recent work on a 750 V β-Ga2O3 MOSFET, this paper extends a physics-based compact modeling approach to higher-voltage devices. The model formulation combines channel current with drift resistance, where drift mobility is extracted from Hall mobility accounting for four dominant scattering mechanisms and their temperature dependence. Simulation results show good agreement with measured transfer and output characteristics, validating the model’s scalability across voltages. This compact model provides a physics-informed framework for incorporating Ga2O3 devices into power electronic circuit simulation and design.