T37.1 - Low-Profile Vertical Shunt Resistor Integration in High-Current Power Modules

Thursday, March 26, 2026

10:20 AM - 10:40 AM CT

Location: 217A

Technical Lecture Presenter(s)

Thiyu S. Warnakulasooriya, MEng (he/him/his)

Nagoya University

Presentation Paper

Co-Author(s)

Jiyoon Choi, MA (she/her/hers)

Nagoya University
Sihoon Choi, PhD (he/him/his)

Nagoya University
JI

Jun Imaoka

Nagoya University
MY

Masayoshi Yamamoto

Institute of Materials and Systems for Sustainability, Nagoya University
LH

Leonard Henrichs

Isabellenhütte Heusler GmbH & Co. KG
J�

Jan Ückerseifer

Isabellenhütte Heusler GmbH & Co. KG
JM

Jan Marien

Isabellenhütte Heusler GmbH & Co. KG

This paper proposes a low-profile vertical shunt resistor and its integration method in a high-current SiC power module. The proposed shunt resistor employs a parallel-pad structure and a low-resistivity alloy to achieve a resistance of 50 µΩ, while maintaining low inductance and a low temperature coefficient of resistance (TCR). The resistor is integrated into a 200 kW SiC half-bridge power module without occupying additional substrate area. Measured resistance values show strong agreement with simulated results across multiple sensing locations. Thermal cycling tests validate the reliability of the solder joints between the resistor and substrate, confirming the suitability of the proposed structure for high-current power modules.