Seminar Description: Driving wide-bandgap (WBG) devices is challenging due to high dv/dt, short short-circuit withstand time and EMI issues. This seminar provides in-depth coverage of both the fundamentals of gate drivers for power semiconductor devices and the latest advanced gate driving technologies from industry and academia that address these challenges.
The seminar begins with an introduction to the fundamental aspects of Si-MOSFET, GaN and SiC devices, along with traditional gate drive methods for WBG devices and their associated challenges. It then covers integrated gate driver technology developed in industry, as well as energy-efficient solutions such as resonant and switched-cap approaches explored in academia. In addition, the seminar highlights recent advancements including optical gate driver, self-powered gate drivers, and RF-based gate drivers. Finally, it concludes with a discussion on protection strategies and in-situ, AI- based health monitoring.
This seminar is well-suited for electrical engineers and researchers developing low-cost reliable gate drivers, not only for low-voltage but also for medium-voltage power semiconductor devices to achieve low-EMI, low-loss and PD-free operation.
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