This paper presents the evaluation of a bidirectional (BDS) GaN switch evaluation board. The BDS GaN device monolithically integrates two GaN devices in a common-drain configuration, enabling bidirectional current conduction and voltage blocking. This integration reduces size and cost while enhancing performance through soft switching. The evaluation board employs two BDS GaN switches in a half-bridge topology, supporting both soft-switching and hard-switching operation. In AC–AC conversion mode, the platform can operate in Zero Voltage Switching (ZVS) Triangular Current Mode (TCM) at low power levels, transitioning to hard switching at higher loads. Additionally, a load connected across the bottom-side output capacitor enables buck converter operation, expanding the board’s application scope. Experimental evaluation highlights the device’s ability to achieve efficient bidirectional power conversion while minimizing parasitics, validating its suitability for high-density and high-efficiency converter designs. The purpose for developing this half bridge topology is so that other users could evaluate the BDS GaN switches for other topologies. Different topologies include dual active bridge, Vienna rectifies, cycloconverter, and matrix-type rectifier.
