D26.5 - Self-Adjusting LFER-Based Dynamic Gate Driving Technique for Fast-Switching GaN HEMTs in 48-V Applications

Thursday, March 26, 2026

12:00 PM - 1:45 PM CT

Location: Hemisfair Ballroom

Technical Dialogue Presenter(s)

Xiangyu Teng, MA (he/him/his)

Department of Electronic & Computer Engineering, The Hong Kong University of Science and Technology

Presentation

Co-Author(s)

JC

Junting Chen

Department of Electronic & Computer Engineering, The Hong Kong University of Science and Technology
Yuwei Wu (she/her/hers)

The Hong Kong University of Science and Technology
Ji Shu, Dr. (he/him/his)

HKUST
KC

Kevin Jing Chen

The Hong Kong University of Science and Technology
Wei Jia Zhang, PhD (she/her/hers)

Department of Electronic & Computer Engineering, The Hong Kong University of Science and Technology

This work introduces a self-adjusting LFER-based dynamic gate drive design for 48 V, high-current GaN power stages. Building on our previously reported 400 V GaN lateral field-effect rectifier (LFER) two-stage driver, we modified the concept for 48 V with an additional gate-to-source shunt resistor, which modulates the effective resistance (REFF) of the LFER branch as operating conditions change. Immediately after turn-on, REFF is low, then increased to a high value as branch current rises. This adaptive behavior suppresses gate ringing and shortens the post-switching damping interval, both of which are critical for MHz switching. In the double-pulse configuration, comparing to the published LFER driver, the proposed self-adjusting version has shown more reduction in ringing amplitude, damping charging time, and gate overshoot without compromising turn-on speed. These results indicate a broader frequency range and reduced EMI risk for the next-generation 48 V bus converters operating at multi-MHz switching frequencies.