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    WBG Integration and Reliability

    T12.3 - Technique for the Accurate Measurement of Average dv/dt of SiC MOSFET

    Wednesday, March 25, 2026
    9:10 AM - 9:30 AM CT
    Location: 214D
    SiC MOSFETs have a high dv/dt which cause degradation of electrical components. To mitigate such issues, existing standards recommend limiting the average dv/dt to a prescribed value. Further, the magnitude of dv/dt is reported to change dynamically with change in operating conditions. Hence to regulate dv/dt, and meet the values as prescribed in the standards, an accurate feedback of dv/dt is required. Existing methods have suggested the use of high speed ADC to obtain the same, as the switching transition time is in the order of nanoseconds. However, this raises the implementation cost. This manuscript first mathematically investigates the feedback corresponding to the drain-source voltage transition, and identifies the parameters correlated to average dv/dt. Next, a measurement technique is proposed which enables the use of a conventional (low-cost) ADC to sample the identified parameters and accurately measure the average dv/dt. Further, a measurement circuit is proposed to implement the proposed technique. Finally, experimental investigation is carried out under different operating conditions. An accuracy of over 92% is achieved in the measured value of average dv/dt.